Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2008-11-06

2009-12-29

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C257SE21648

Reexamination Certificate

active

07638407

ABSTRACT:
Forming a capacitor of a semiconductor device includes forming an interlayer dielectric having holes over a semiconductor substrate. A conductive layer is then formed on surfaces of the holes and on the upper surface of the interlayer dielectric. A silicon-containing conductive layer is formed by flowing a silicon source gas for the semiconductor substrate formed with the conductive layer, so that silicon atoms can penetrate into the conductive layer. The silicon-containing conductive layer prevents etchant from infiltrating the interlayer dielectric below the silicon-containing conductive layer.

REFERENCES:
patent: 2006/0014385 (2006-01-01), Kim et al.
patent: 2006/0246678 (2006-11-01), Manning

Affiliated with

Also associated with

Rating

Method for forming capacitor of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming capacitor of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming capacitor of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4105663