Semiconductor integrated circuit device and process for...

Details Semiconductor integrated circuit device and process for... Semiconductor integrated circuit device and process for...

2008-04-14

2009-12-15

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S630000, C438S651000, C438S683000, C438S755000, C257S292000, C257S398000, C257S519000, C257SE21170, C257SE21194, C257SE21198, C257SE21200, C257SE21324, C257SE21654, C257SE21660, C257SE27088, C257SE29157

Reexamination Certificate

active

07632744

ABSTRACT:
Formation of an WNxfilm24constituting a barrier layer of a gate electrode7A having a polymetal structure is effected in an atmosphere containing a high concentration nitrogen gas, whereby release of N (nitrogen) from the WNxfilm24is suppressed in the heat treatment step after the formation of the gate electrode7A.

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