Low-temperature polysilicon display and method for...

Details Low-temperature polysilicon display and method for... Low-temperature polysilicon display and method for...

2005-11-08

2009-02-17

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S487000

Reexamination Certificate

active

07491559

ABSTRACT:
A display panel comprising at least one display area and one peripheral circuit area having electronic components for driving the display components in the display area. The electronic components in the display area are fabricated substantially on a polysilicon layer converted from amorphous silicon by a solid phase crystallization process, whereas the electronic components in the peripheral circuit area are fabricated substantially on a polysilicon layer converted from amorphous silicon first by the solid phase crystallization process and then by laser annealing. As such, display area has a more uniform poly-Si layer substantially free of defects associated with laser annealing, and the peripheral circuit has a poly-Si layer with higher electron mobility.

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Asia Display/IMID 04 Proceedings; Nakajima et al.; “The Latest Poly-Si TFT Circuit Technologies for System-On-Glass LCD”; pp. 1-6; 2004.

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