Method for manufacturing CMOS image sensor

Details Method for manufacturing CMOS image sensor Method for manufacturing CMOS image sensor

2006-12-22

2009-08-11

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S060000, C438S145000, C438S476000, C257SE27133

Reexamination Certificate

active

07572663

ABSTRACT:
A method for manufacturing a CMOS image sensor is provided. The method can include forming an interlayer dielectric layer on a semiconductor substrate including a gate electrode, photodiode area, and LDD region; selectively removing the interlayer dielectric layer such that the interlayer dielectric layer remains on the photodiode area; performing a first heat treatment process; sequentially forming a first insulating layer and a second insulating layer on the semiconductor substrate, where the etching selectivity of the first insulating layer is different from the etching selectivity of the second insulating layer; selectively etching the second insulating layer to form spacers on sidewalls of the gate electrode; selectively removing the first insulating layer to expose a source/drain area and forming a high-density N-type diffusion area in the exposed source/drain area; performing a second heat treatment process; and forming a metal silicide layer the high-density N-type diffusion area.

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