Nonvolatile semiconductor memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185220, C365S185180, C365S185240, C365S185170

Reexamination Certificate

active

07492643

ABSTRACT:
A nonvolatile semiconductor memory according to an example of the present invention comprises a memory cell array composed of a plurality of memory cells, an internal circuit which writes into the plurality of memory cells by use of one of a first mode in which a first threshold distribution can be obtained and a second mode in which a second threshold distribution different from the first threshold distribution can be obtained, and a threshold distribution control circuit which controls switchover between the first mode and the second mode.

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U.S. Appl. No. 11/533,638, filed Sep. 20, 2006, Takeuchi.

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