Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2004-07-26
2009-02-17
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S185180, C365S185240, C365S185170
Reexamination Certificate
active
07492643
ABSTRACT:
A nonvolatile semiconductor memory according to an example of the present invention comprises a memory cell array composed of a plurality of memory cells, an internal circuit which writes into the plurality of memory cells by use of one of a first mode in which a first threshold distribution can be obtained and a second mode in which a second threshold distribution different from the first threshold distribution can be obtained, and a threshold distribution control circuit which controls switchover between the first mode and the second mode.
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Kabushiki Kaisha Toshiba
Lam David
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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