Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2007-08-03

2009-08-25

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S005000, C257S295000, C257S379000, C257SE21665

Reexamination Certificate

active

07579614

ABSTRACT:
A magnetic random access memory includes a semiconductor substrate having a projection projecting from a substrate surface, first and second gate electrodes and a first source diffusion layer formed on first and second side surfaces and an upper surface of the projection, first and second drain diffusion layers formed in the substrate surface at roots on the first and second side surfaces of the first projection, first and second word lines formed above the semiconductor substrate, a bit line formed above the first and second word lines, a first magnetoresistive effect element formed between the bit line and the first word line, a second magnetoresistive effect element formed between the bit line and the second word line, a first contact which connects the first magnetoresistive effect element and the first drain diffusion layer, and a second contact which connects the second magnetoresistive effect element and the second drain diffusion layer.

REFERENCES:
patent: 6795334 (2004-09-01), Iwata et al.
patent: 7138685 (2006-11-01), Hsu et al.
patent: 2004/0061156 (2004-04-01), Cha
patent: 2004/0175887 (2004-09-01), Cha
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, IEEE International Solid-State Circuits Conference 2000/Session 7/TD: Emerging Memory & Device Technologies/paper TA 7.2, Digest of Technical Papers, Feb. 8, 2000, pp. 128-129.

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