Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

Filed on

2005-06-30

Date issued

2009-08-11

Examiner

Monbleau, Davienne (Department: 2893)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Integrated circuit structure with electrically isolated...

SubSubClass

Passive components in ics

Other Related Categories

C257SE27017, C257SE27095

Type

Reexamination Certificate

Status

active

Patent number

07573120

Description

ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper electrodes, an oxide film formed in such a manner as to coat the capacitor and having a thickness of 5 nm or more and 50 nm or less, and a protective film formed on the oxide film by an ALD process.

REFERENCES:
patent: 5960252 (1999-09-01), Matsuki et al.
patent: 6049103 (2000-04-01), Horikawa et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6509601 (2003-01-01), Lee et al.
patent: 6617178 (2003-09-01), Aggarwal et al.
patent: 2005/0136554 (2005-06-01), Okita et al.
patent: 2001-36026 (2001-02-01), None
patent: 2002-43541 (2002-02-01), None

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