Semiconductor device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185240, C365S185260, C365S185270

Reexamination Certificate

active

07639541

ABSTRACT:
A semiconductor device includes a circuit forming area and a memory area including memory cells, first and second wells, a first conductor film formed over both wells and a second conductor film formed over the first well. First semiconductor regions are formed in the first region and a second semiconductor region is formed in the second region. The memory cells each include a capacitance element, including the first conductor film and second region, an element for reading data, including the first conductor film and first regions, and a selection field effect transistor, including the second conductor film and first regions. A length of the first conductor film of the capacitance element is larger than a length of the first conductor film of the element for reading data. A word line of the memory cell is connected to the second semiconductor region. During a reading data operation, a first bit line of the memory cell is connected to the first semiconductor region of the element for reading data via the selection field effect transistor.

REFERENCES:
patent: 5477068 (1995-12-01), Ozawa
patent: 5917751 (1999-06-01), Wakita
patent: 7349253 (2008-03-01), Perner et al.
patent: 7460396 (2008-12-01), Oka et al.
patent: 2001-185633 (2001-07-01), None
patent: 2001-257324 (2001-09-01), None

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