Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1997-04-23
1999-06-15
Brown, Peter Toby
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438255, 438964, H01L 2120, H01L 218242
Patent
active
059131276
ABSTRACT:
An embodiment of the present discloses a thermal process for forming hemispherical grained silicon on a silicon material by the steps of: heating the silicon material to a steady state temperature; exposing the silicon material to a hydrogen containing ambient; and causing a decreasing temperature differential of the silicon material while exposing the silicon material to a silicon hydride gas. This embodiment is accomplished by using a thermal cycle having a temperature ramp up period, a temperature steady state period during at least a portion of which the H.sub.2 ambient is present and temperature ramp down period during at least a portion of which the diluted silicon hydride gas is present. A second embodiment discloses a process for forming a hemispherical grained silicon surface on at least one capacitor plate made of silicon material, by increasing the temperature of the capacitor plate in an H.sub.2 containing ambient; exposing a surface of the capacitor plate's silicon material to a cleaning gas (such as GeH.sub.4, NF.sub.3, using ultraviolet light in the presence of ozone gas, vapor hydrofluoric acid silicon hydride gas, and H.sub.2); and decreasing the temperature of the capacitor plate while exposing the capacitor plate to a silicon hydride gas.
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Dennison Charles H.
Thakur Randhir P. S.
Brown Peter Toby
Micro)n Technology, Inc.
Thomas Toniae M.
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