Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2004-03-19
2009-06-16
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S093000, C117S095000, C117S105000, C117S109000, C117S923000, C117S952000
Reexamination Certificate
active
07547359
ABSTRACT:
An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe3into a film deposition chamber4whose interior is depressurized by gas evacuation using a vacuum pump5to maintain a degree of vacuum of 200-8000 Pa during supply of the carrier gas and the aerosol is blown from a nozzle6provided on the end of the transfer pipe3inside the film deposition chamber4to impinge on a substrate fastened to a substrate holder7to make the impact force of the particles at collision with the substrate 4 GPa or greater, thereby transforming the crystal structure of the aluminum nitride from hexagonal to cubic to deposit cubic aluminum nitride on the substrate. As a result, a method of transforming the crystal structure of a Group XIII nitride is provided that enables transformation of a Group XIII nitride to cubic crystal structure using a system of simpler configuration than that used for transforming the crystal structure of a Group XIII nitride by a static pressure application process.
REFERENCES:
patent: 55-056004 (1980-04-01), None
patent: 55-56004 (1980-04-01), None
patent: 58-204809 (1983-11-01), None
Akewatashi, Jun et al., Ceramic Thin Film Formation Technology Using Collision and Solidification Phenomena of Particles and Ultra-fine Particles.—Aerosol Deposition Method for High Speed Coating at Low Temperature, National Institute of Advanced Industrial Science and Technology, Tsukuba, pp. 459-466, 2002, with Partial English Translation.
Kim, I.W. et al., Critical Thickness for Transformation of Epitaxially Stabilized Cubic AIN in Superlattices, Applied Physics Letters, vol. 78, No. 7, pp. 892-894, 2001.
Mashimo, Tsutomu et al., Yield Properties, Phase Transition, and equation of State of Aluminum Nitride (AIN) Under Shock Compression up to 15 GPa., Journal of Applied Physics, vol. 86, No. 12, pp. 6710-6716, 1999.
Akedo Jun
Iwata Atsushi
Hiteshew Felisa C
National Institute of Advanced Industrial Science and Technology
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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