Method to form selective strained Si using lateral epitaxy

Details Method to form selective strained Si using lateral epitaxy Method to form selective strained Si using lateral epitaxy

2006-11-21

2009-08-11

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S433000, C438S438000, C257S217000, C257SE21549

Reexamination Certificate

active

07572712

ABSTRACT:
Embodiments for FET devices with stress on the channel region by forming stressor regions under the source/drain regions or the channel region and forming a selective strained Si using lateral epitaxy over the stressor regions. In a first example embodiment, a lateral epitaxial layer is formed over a stressor region under a channel region of an FET. In a second example embodiment, a lateral S/D epitaxial layer is formed over S/D stressor region under the source/drain regions of an FET. In a third example embodiment, both PFET and NFET devices are formed. In the PFET device, a lateral S/D epitaxial layer is formed over S/D stressor region under the source/drain regions. In the NFET device, the lateral epitaxial layer is formed over a stressor region under a channel region of the NFET.

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