Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-11-02
2009-11-03
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280, C365S185170, C365S185090
Reexamination Certificate
active
07613048
ABSTRACT:
A nonvolatile semiconductor memory device including a memory cell array including a plurality of electrically rewritable nonvolatile memory cells arranged in series, the memory cell storing data using a plurality of threshold levels, a threshold level storage section storing a programming method switch threshold level on which a first programming method and a second programming method are switched, a comparison circuit comparing the programming method switch threshold level with a programming data threshold level and outputting a comparison result, a control signal generation circuit setting the first programming method or the second programming method based on the comparison result and outputting a control signal corresponding to the first programming method or the second programming method and a voltage generation circuit generating a programming voltage and an intermediate voltage which are applied to the memory cell based on the control signal.
REFERENCES:
patent: 6134148 (2000-10-01), Kawahara et al.
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6958936 (2005-10-01), Quader et al.
patent: 7173859 (2007-02-01), Hemink
patent: 2007/0081388 (2007-04-01), Joo
patent: 2003-196988 (2003-07-01), None
patent: 1020070039720 (2007-04-01), None
Inoue Atsushi
Shano Toshifumi
Ho Hoai V
Kabushiki Kaisha Toshiba
Lappas Jason
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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