Semiconductor device having polycrystalline silicon resistors

Details Semiconductor device having polycrystalline silicon resistors Semiconductor device having polycrystalline silicon resistors

2006-03-22

2009-10-13

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S542000, C257S543000, C257SE27047

Reexamination Certificate

active

07602044

ABSTRACT:
A semiconductor device has a semiconductor substrate, a first insulating film disposed on the semiconductor substrate, and groups of resistors made of polycrystalline silicon and disposed on the first insulating film. At least some of the groups of resistors include at least one dummy resistor made of polycrystalline silicon. A second insulating film is disposed on the resistors and on the at least one dummy resistor of the resistor groups. First metal portions are disposed in respective contact holes disposed in the second insulating film for connecting respective portions of the resistors in the respective resistor groups. Second metal portions are disposed on the second insulating film and over the resistors and the at least one dummy resistor in the respective resistor groups.

REFERENCES:
patent: 2006/0081842 (2006-04-01), Tone et al.

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