Semiconductor device with a low dielectric constant film...

Details Semiconductor device with a low dielectric constant film... Semiconductor device with a low dielectric constant film...

2008-11-25

2009-11-24

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S781000, C257SE21579

Reexamination Certificate

active

07622807

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

REFERENCES:
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Arnal et al.; “A Novel SiO2-Air Gap Low K for Copper Dual Damascene Interconnect”; Advanced Metallization; c. 2000; pp. 71-76.
Japanese Office Action, with English Translation, issued in corresponding Japanese Patent Application No. JP 2004-309579, mailed on Dec. 18, 2007.

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