Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-12-18
2009-02-17
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000
Reexamination Certificate
active
07491979
ABSTRACT:
Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide; and a third electrode layer disposed on the second electrode layer and formed of an optical reflective material.
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patent: 2003/0118865 (2003-06-01), Marks et al.
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Text of the First Office Action issued in corresponding Chinese Patent Application No. 200510054281X, and translation thereof.
Office Action mailed Apr. 21, 2008 from the Korean Intellectual Property Office.
Kwak Joon-seop
Seong Tae-yeon
Song June-o
Buchanan & Ingersoll & Rooney PC
Gwangju Institute of Science and Technology
Pham Long
Samsung Electro-Mechanics Co. Ltd.
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