Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-09-06

2009-10-27

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07609739

ABSTRACT:
A semiconductor laser device includes: an active layer having a single or multiple quantum well structure including a well layer of InwGa1-wN (0.08≦w≦0.2) and a barrier layer of InbGa1-bN (0.01≦b≦0.05); a cladding layer of AlyGa1-yN (0≦y≦0.1) provided on the active layer, the cladding layer including a ridge portion extending like a stripe in axial direction of an optical cavity and a non-ridge portion located on both sides of the ridge portion; and an overflow blocking layer of AlzGa1-zN (y<z) provided between the active layer and the cladding layer. A thickness of D (μm) of the non-ridge portion and an axial length of L (μm) of the optical cavity satisfies formulas L≧750−400×(D/0.01) and 0<D≦0.01.

REFERENCES:
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patent: 7015053 (2006-03-01), Kozaki et al.
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patent: 2006/0209395 (2006-09-01), Sasaoka et al.
patent: 2002-299765 (2002-10-01), None

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