Semiconductor light emitting apparatus and method of...

Details Semiconductor light emitting apparatus and method of... Semiconductor light emitting apparatus and method of...

2007-07-18

2009-08-25

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Having diverse electrical device

C438S024000, C438S029000, C438S046000, C438S047000, C438S956000, C257S094000, C257SE25019

Reexamination Certificate

active

07579200

ABSTRACT:
A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer, and second-conductivity-type second cladding layer on substrate; pair of opposing first recesses forming stripe-patterned ridge configuring major current path, and second recess disposed on outer side of one of first recesses on second cladding layer side, each recesses formed to depth keeping active layer unreached; first-conductivity-type current blocking layer formed over inner surfaces of first and second recesses, and second-conductivity-type contact layer formed on current blocking layer; wherein light emitting portion and thyristor structural portion composed of stack of second-conductivity-type contact layer, first-conductivity-type current blocking layer, second-conductivity-type cladding layer, active layer and first-conductivity-type first cladding layer at second recess are formed; and ON voltage of thyristor is adjustable on selection of depth of second recess.

REFERENCES:
patent: 6204078 (2001-03-01), Inomoto
patent: 6608850 (2003-08-01), Inaba
patent: 2004/0195576 (2004-10-01), Watanabe et al.
patent: 05-067849 (1993-03-01), None

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