Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-12-13
2009-12-29
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185230, C365S189110, C365S226000
Reexamination Certificate
active
07639540
ABSTRACT:
A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.
REFERENCES:
patent: 5349669 (1994-09-01), Arai et al.
patent: 5444664 (1995-08-01), Kuroda et al.
patent: 5594360 (1997-01-01), Wojciechowski
patent: 5781477 (1998-07-01), Rinerson et al.
patent: 5808606 (1998-09-01), Kodama et al.
patent: 5828826 (1998-10-01), Sato et al.
patent: 5956270 (1999-09-01), Shimomura et al.
patent: 5991221 (1999-11-01), Ishikawa et al.
patent: 6687159 (2004-02-01), Pasotti et al.
patent: 7006382 (2006-02-01), Pekny et al.
patent: 7120061 (2006-10-01), Daga
patent: 7372758 (2008-05-01), Yaoi et al.
patent: 2006/0133147 (2006-06-01), Lee et al.
patent: 2007/0008801 (2007-01-01), Chiang et al.
Patent Cooperation Treaty, International Search Report, Form PCT/ISA/210, Apr. 2007, pp. 2.
Gillingham Peter
Kim Jin-Ki
Chapin IP Law LLC
Chapin, Esq. Barry W.
Mosaid Technologies Incorporated
Nguyen Tan T.
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