Method and apparatus for monitoring and controlling sputter depo

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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204192F, 204298, C23C 1500

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active

041720202

ABSTRACT:
A system is provided for monitoring sputtering deposition parameters and through closed-loop control achieving rapid modification of the parameters to maintain or to obtain a film composition. In reactive sputtering, the sputtering chamber has individual gas pressure controllers for the various gases to be added to the chamber. A holder for a substrate on which the film is to be deposited includes a heater with adjustable control. A differentially pumped quadrupole mass analyzer interconnects with the chamber bottom to receive a sample of plasma ions, measures the ionized species existing in the plasma and generates signals related to the film composition. A controller responsive to the quadrupole analyzer actuation adjusts the pressure of the one or more reactive or non-reactive gases being provided to the chamber, and/or controls other deposition parameters, such as substrate temperature or other plasma features.

REFERENCES:
patent: 3738926 (1973-06-01), Westwood et al.
patent: 4036167 (1977-07-01), Lu
J. E. Green et al., "Glow Discharge Optical Spectroscopy for Monitoring Sputter Deposited Film Thickness", J. Vac. Sci. Technol., vol. 10, pp. 1144-1149 (1973).
W. D. Westwood et al., "Analysis of Sputtering Discharge By Optical & Mass Spectrometry", Parts 1 & 2, J. Appl. Phys., pp. 2610-2626 (1973).
P. M. Schaible et al., "Deposition Measurements in a Cathode Sputtering System", IBM Tech. Disc. Bull., vol. 6, p. 112 (1963).
J. W. Coburn, "A System for Determining the Mass & Energy of Particles Incident on a Substrate in a Planar Diode Sputtering System", Rev. Sci. Inst., vol. 41, pp. 1219-1223 (1970).
J. W. Coburn et al., "Glow-Discharge Mass Spectrometry-Technique for Determining Composition Profiles in Solids", J. Appl. Phys., vol. 45, pp. 1779-1786 (1974).
M. Hutt, "Microprocessor Automated Sputtering", Solid-State Technology, pp. 74-76 (1976).

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