Pattern forming method, photomask manufacturing method,...

Details Pattern forming method, photomask manufacturing method,... Pattern forming method, photomask manufacturing method,...

2006-01-31

2009-10-27

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000, C430S296000, C430S313000, C430S323000, C430S330000, C430S331000, C430S942000

Reexamination Certificate

active

07608368

ABSTRACT:
A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (≧2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1≦i≦M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

REFERENCES:
patent: 6550990 (2003-04-01), Sakurai et al.
patent: 6929903 (2005-08-01), Itoh et al.
patent: 2005/0242062 (2005-11-01), Sakurai et al.
patent: 2002-252167 (2002-09-01), None

Affiliated with

Also associated with

Rating

Pattern forming method, photomask manufacturing method,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern forming method, photomask manufacturing method,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern forming method, photomask manufacturing method,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4090618