Method and systems for utilizing simplified resist process...

Details Method and systems for utilizing simplified resist process... Method and systems for utilizing simplified resist process...

2005-02-11

2009-02-24

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S330000

Reexamination Certificate

active

07494752

ABSTRACT:
A method and system for utilizing a simplified resist process model to perform optical and process corrections. More specifically, the present invention provides a fast and easy post exposure bake (PEB) effects calculation which can be used in connection with OPC. The model can be used to increase OPC modeling accuracy, by taking PEB effects into consideration, without incurring a large overhead increase due to PEB calculation cost. The method includes providing an image, calculating initial acid concentration and adding acid concentration contours to the image, calculating deprotection concentration and adding deprotection concentration contours to the image, determining latent image contour without diffusion, moving the latent image contour in a direction of lower deprotection concentration to provide the final latent image, performing OPC on the chemically amplified resist using edge movement based on the final latent image, and repeating the process to obtain convergence.

REFERENCES:
Croffie, E., “Simulation Tools for Optical Resist Models (STORM)”, Ph.D. Thesis, Memorandum No. UCB/ERL M01/29, University of California, Berkely, Aug. 2001, pp. 26-35.

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