Method for forming silicon oxynitride film

Details Method for forming silicon oxynitride film Method for forming silicon oxynitride film

2006-07-03

2009-12-15

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S787000, C438S788000, C257SE21230, C257SE21304

Reexamination Certificate

active

07632757

ABSTRACT:
A silicon oxynitride film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a chlorosilane family gas, a second process gas containing an oxidizing gas, and a third process gas containing a nitriding gas. This method alternately includes first to sixth steps. The first, third, and fifth steps perform supply of the first, second, and third process gases, respectively, while stopping supply of the other two process gases. Each of the second, fourth, and sixth steps stops supply of the first to third process gases. The third and fifth steps include an excitation period of supplying the second and third process gases, respectively, to the process field while exciting the respective process gases by an exciting mechanism.

REFERENCES:
patent: 6566186 (2003-05-01), Allman et al.
patent: 2002/0111000 (2002-08-01), Kawakami et al.
patent: 2006/0128161 (2006-06-01), Shibata et al.
patent: 2004-281853 (2004-10-01), None
patent: 2005-011904 (2005-01-01), None
patent: WO 2004-017383 (2004-02-01), None

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