SOI wafer and its manufacturing method

Details SOI wafer and its manufacturing method SOI wafer and its manufacturing method

2004-09-08

2009-06-09

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257SE21561

Reexamination Certificate

active

07544583

ABSTRACT:
Since a supporting wafer contains nitrogen of 1×1014atmos/cm3and interstitial oxygen atom concentration, Oi, (old ASTM) of 13×1017atoms/cm3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer can be captured by the BMD and the OSF in the wafer during the heat treatment after the bonding. Consequently, the contamination from the metal impurities in the active layer can be reduced.

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