Semiconductor image sensor

Details Semiconductor image sensor Semiconductor image sensor

1980-11-26

1982-12-21

Edlow, Martin H.

357 22, 357 30, H01L 2714, H01L 3100

Patent

active

043652620

ABSTRACT:
A semiconductor image sensor employing static induction transistors having a nonsaturating current-voltage characteristic providing a high degree of linearity over a wide range of optical input intensities and a high operating speed. A plurality of high resistance channel regions are formed on a substrate region. Low resistance semiconductor storage regions of the same conductivity type are formed on corresponding ones of the channel regions and gates which form controllable potential barriers are provided around the channel regions. An insulating film is formed over the low resistance storage regions. Electrically conductive bit line electrodes are formed over the insulating film and electrical conductive word lines are connected to corresponding ones of the gates.

REFERENCES:
patent: 4148051 (1979-04-01), Koike
patent: 4270059 (1981-05-01), Nishizawa et al.
patent: 4317127 (1982-02-01), Nishizawa
patent: 4320410 (1982-03-01), Nishizawa et al.
patent: 4326209 (1982-04-01), Nishizawa et al.
Nishizawa et al., IEEE Journ. Solid State Circuits, vol. SC-13, No. 6, Oct. 1978.

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