Methods for measuring capacitance

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – For fault location

Reexamination Certificate

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C324S534000, C324S642000, C324S762010

Reexamination Certificate

active

07548067

ABSTRACT:
Methods for determining capacitance values of a metal on semiconductor (MOS) structure are provided. A time domain reflectometry circuit may be loaded with a MOS structure. The MOS structure may be biased with various voltages, and reflectometry waveforms from the applied voltage may be collected. The capacitance of the MOS structure may be determined from the reflectometry waveforms.

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