Semiconductor device manufacturing method and ion implanter...

Details Semiconductor device manufacturing method and ion implanter... Semiconductor device manufacturing method and ion implanter...

2005-08-16

2009-12-29

Vanore, David A (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000, C250S398000, C315S111810, C438S510000, C438S513000

Reexamination Certificate

active

07638782

ABSTRACT:
Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.

REFERENCES:
patent: 7038223 (2006-05-01), Starcher
patent: 7118657 (2006-10-01), Golovchenko et al.
patent: 07-221306 (1995-08-01), None
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patent: 3202002 (2001-06-01), None
Kubo, Hiroko., et al. “Quantitative Charge Build-Up Evaluation Technique by Using MOS Capacitors with Charge Collecting Electrodes in Wafer Processing.” IEICE Transactions on Electronics, vol. E79-C, No. 2, Feb. 1996 pp. 198-205.
Aoki, Norishige, “Charging Damage in Semiconductor Process.” Chapter 3, Realize Corporation, Feb. 29, 2005, pp. 187-194 (w/4 Pages of Partial English translation).

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