Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-05-18

2009-11-24

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S049000, C257S057000, C257S069000, C257SE29117

Reexamination Certificate

active

07622740

ABSTRACT:
There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively etched to form a contact pad or conductive interconnects.

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Office Action (Application No. 08-307443) with partial translation, Oct. 5, 2004, 7 pages.

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