Organic thin film transistors

Details Organic thin film transistors Organic thin film transistors

2008-05-15

2009-08-11

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S347000, C257S352000, C257SE51006, C257SE51007, C257SE51029, C438S099000, C438S780000

Reexamination Certificate

active

07573063

ABSTRACT:
A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.

REFERENCES:
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patent: 2007/0138463 (2007-06-01), Herlogsson et al.
patent: 2008/0050747 (2008-02-01), Korlach et al.
patent: 2009/0026513 (2009-01-01), Johansson et al.

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