Power semiconductor device

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

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C361S111000

Reexamination Certificate

active

07573687

ABSTRACT:
A power semiconductor device includes a power semiconductor element, a protection circuit, an inspection terminal, and an electrical conductor. The protection circuit includes multiple zener diodes connected in series between a gate and an emitter of the power semiconductor element. The protection circuit limits a voltage between the gate and emitter of the power semiconductor element, when an abnormal voltage is applied to the gate. The electrical conductor electrically connects the inspection terminal to a node between the zener diodes of the protection circuit. The zener diodes are separately inspected by using the inspection terminal.

REFERENCES:
patent: 5502399 (1996-03-01), Imai
patent: 5536958 (1996-07-01), Shen et al.
patent: 5736779 (1998-04-01), Kobayashi
patent: 5828081 (1998-10-01), Yoshida et al.
patent: 6208011 (2001-03-01), Yasuda
patent: 6218889 (2001-04-01), Fujiki et al.
patent: A-5-67661 (1993-03-01), None
patent: A-7-142771 (1995-06-01), None
patent: A-11-340459 (1999-12-01), None
patent: S-2006-314054 (2006-11-01), None

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