Nonvolatile memory device and fabrication method thereof

Details Nonvolatile memory device and fabrication method thereof Nonvolatile memory device and fabrication method thereof

2007-06-28

2009-11-10

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

C257S002000, C257S003000, C257S004000, C257S005000, C257SE29002

Reexamination Certificate

active

07615769

ABSTRACT:
A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM on an upper edge of a lower electrode for obtaining a stable threshold drive voltage level.

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