Parallel electron beam lithography stamp (PEBLS)

Details Parallel electron beam lithography stamp (PEBLS) Parallel electron beam lithography stamp (PEBLS)

2006-04-03

2009-06-23

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492220, C250S492300, C250S491100, C430S296000, C430S942000, C427S458000, C977S939000, C977S947000, C977S953000, C850S062000

Reexamination Certificate

active

07550747

ABSTRACT:
An array of vertically aligned electron emitting nanotips such as multiwall carbon nanotubes are formed and patterned for use as a lithographic stamp. The spacing and/or arrangement of the nanotips correspond to a predetermined pattern that is desired to be formed on an opposing substrate. Simultaneous actuation of the nanotips by a common electrode forms a pattern on the opposing substrate without any necessary scanning techniques or use of masks. Applying a sufficient electrical potential between the array and the substrate generates electron emission from the tips so as to cure a resist, produce localized electrochemical reactions, establish localized electrostatic charge distributions or perform other desirable coating or etching process steps so as to create nanoelectronic circuitry or to facilitate molecular or nanoscale processing.

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