Spin-transfer MRAM structure and methods

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C257S295000, C257SE27006, C438S057000, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

07605437

ABSTRACT:
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer.

REFERENCES:
patent: 6714444 (2004-03-01), Huai et al.
patent: 2005/0057960 (2005-03-01), Saito et al.
patent: 2005/0164414 (2005-07-01), Deak
patent: 2006/0114618 (2006-06-01), Hosomi et al.
patent: 2006/0262594 (2006-11-01), Fukumoto
patent: 2007/0201168 (2007-08-01), Sugibayashi et al.
Berger, L., Multilayer configuration for experiments of spin precession induced by a dc current, J Appl. Phys. 93, No. 10,(7693) May 15, 2003.
Fuch, G. D., et al Adjustable spin torque in magnetic tunnel junction with two fixed layers, Applied Physics Letters, 86,152509, 2005.

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