Semiconductor device and its manufacture method

Details Semiconductor device and its manufacture method Semiconductor device and its manufacture method

2005-04-28

2009-02-17

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23011

Reexamination Certificate

active

07492047

ABSTRACT:
The present invention relates to a semiconductor device which comprises a plug layer which is embedded in a window penetrating an inter-layer insulation film, and flattened by using a chemical mechanical polishing, a titanium Ti film which is deposited to extend from the inter-layer insulation film to the plug layer, a titanium nitride TiN film which is deposited on the Ti film, a wiring layer which contains aluminum Al or copper Cu deposited on the TiN film, and an underlying film which is formed between the inter-layer insulation layer and the Ti film.

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Korean Office Action dated Sep. 29, 2006, issued in corresponding Korean Patent Application No. 10-2005-7009149.
Japanese Office Action issued on Sep. 16, 2008 for corresponding Japanese Patent Application No. 2004-571296.

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