Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-05-25
2009-11-10
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C257SE21122, C257SE21567, C257SE21568
Reexamination Certificate
active
07615464
ABSTRACT:
A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.
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Kerdiles Sébastien
Letertre Fabrice
Maleville Christophe
Rayssac Olivier
Booker Vicki B
Landau Matthew C
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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