Semiconductor device and method for manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S710000, C257SE23180, C257SE23181, C257SE23188, C257SE23192, C257SE23193

Reexamination Certificate

active

07633150

ABSTRACT:
A disclosed semiconductor device comprises a substrate, an element on the substrate and a sealing structure for sealing the element. The sealing structure has a structure such that a partition wall made of a metallic material formed on the substrate by a plating method so as to surround the element and a cap portion disposed on the partition wall are bonded via a bonding layer made of an inorganic material.

REFERENCES:
patent: 6297072 (2001-10-01), Tilmans et al.
patent: 6555901 (2003-04-01), Yoshihara et al.
patent: 7067355 (2006-06-01), Haluzak et al.
patent: 7180173 (2007-02-01), Kuo et al.
patent: 2002/0113296 (2002-08-01), Cho et al.
patent: 2004/0087043 (2004-05-01), Lee et al.
patent: 2005/0012169 (2005-01-01), Ikeda et al.
patent: 2006/0105493 (2006-05-01), Hunze et al.
patent: 1 405 821 (2004-04-01), None
patent: 1 544 164 (2005-06-01), None
patent: 63-261860 (1988-10-01), None
patent: 5-13608 (1993-01-01), None
patent: 08-316496 (1996-11-01), None
patent: 2000-141300 (2000-05-01), None
patent: 2002-246489 (2002-08-01), None
patent: 2005-019966 (2005-01-01), None
Hsueh-An Yang, et al; “Localized induction heating solder bonding for wafer level MEMS packaging”, Institute of Physics Publishing, Journal of Micromechanics and Microengineering, 15 (2005), pp. 394-399.
Warren Welch III, et al; “Transient Liquid Phase (TLP) Bonding For Microsystem Packaging Applications”, The 13thInternational Conference on Solid-State Sensors, Actuators and Microsystems, Seoul, Korea, Jun. 5-9, 2005, pp. 1350-1353.
Wei Ma, et al; “Fabrication and packaging of inertia micro-switch using low-temperature photo-resist molded metal-electroplating technology”, Sensors and Actuators A 111 (2004), pp. 63-70.
European Search Report: dated Nov. 19, 2008; Application No./Patent No. 062353441.7-2203 / 1743868.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4077805

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.