Low k interconnect dielectric using surface transformation

Details Low k interconnect dielectric using surface transformation Low k interconnect dielectric using surface transformation

2004-08-31

2009-06-23

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S759000, C257S760000

Reexamination Certificate

active

07550824

ABSTRACT:
Systems, devices and methods are provided to improve performance of integrated circuits by providing a low-k insulator. One aspect is an integrated circuit insulator structure. One embodiment includes a solid structure of an insulator material, and a precisely determined arrangement of at least one void formed within the solid structure which lowers an effective dielectric constant of the insulator structure. One aspect is a method of forming a low-k insulator structure. In one embodiment, an insulator material is deposited, and a predetermined arrangement of at least one hole is formed in a surface of the insulator material. The insulator material is annealed such that the low-k dielectric material undergoes a surface transformation to transform the arrangement of at least one hole into predetermined arrangement of at least one empty space below the surface of the insulator material. Other aspects are provided herein.

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