Ohmic contact for nitride-based semiconductor device

Details Ohmic contact for nitride-based semiconductor device Ohmic contact for nitride-based semiconductor device

2005-08-22

2009-06-30

Sarkar, Asok K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S103000, C257SE29144, C257SE33028, C257SE33063

Reexamination Certificate

active

07554123

ABSTRACT:
An improved ohmic contact for a nitride-based semiconductor device is provided. In particular, a semiconductor device and method of manufacturing the semiconductor device are provided in which a semiconductor structure has an ohmic contact that includes a contact layer and a metal layer thereon. The contact layer includes at least Aluminum (Al) and Indium (In), and can further include Gallium (Ga) and/or Nitrogen (N). The molar fraction of Al and/or In can be increased/decreased within the contact layer.

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