Infrared solid-state image pickup apparatus and a production...

Details Infrared solid-state image pickup apparatus and a production... Infrared solid-state image pickup apparatus and a production...

2006-01-12

2009-10-06

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257S355000, C257S347000, C257S354000, C257S374000, C257SE29287, C257S184000, C257S187000, C257S292000

Reexamination Certificate

active

07598584

ABSTRACT:
An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.

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Masashi Ueno, et al. “Monolithic Uncooled Infrared Image Sensor with 160×120 Pixels”, Proc. SPIE, 1995, vol. 2552, pp. 636-643.
Masashi Ueno, et al. “320×420 Element Uncooled Infrared Focal Plane Array Using SOI Wafer”, ITE Technical Report, vol. 24, No. 17, pp. 53-58, IPU2000-16(Feb. 2000).

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