Thin film transistor substrate of horizontal electric field...

Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only

Reexamination Certificate

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Reexamination Certificate

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07489380

ABSTRACT:
A thin film transistor substrate comprises a gate line disposed on a substrate, a data line that crosses the gate line with a gate insulating film therebetween to define a pixel area, and a thin film transistor connected to the gate line and the data line. The thin film transistor substrate of a horizontal electric field applying type further comprises a pixel electrode plate connected to the thin film transistor, a protective film disposed to cover the data line, the thin film transistor and the pixel electrode plate on the gate insulating film, and a common electrode disposed at an array area provided with the thin film transistor array and disposed in a mesh shape on the protective film.

REFERENCES:
patent: 7292302 (2007-11-01), Min et al.
patent: 2005/0231676 (2005-10-01), Lin et al.
patent: 2005-173536 (2005-06-01), None
Office Action issued in corresponding Chinese Patent Application No. 2006101705147; issued Aug. 22, 2008.

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