Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1990-08-01
1995-09-12
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257276, H01L 23367, H01L 2906, H01L 29812
Patent
active
054499305
ABSTRACT:
This invention is related to a III-V type of compound semiconductor device, having improved heat dissipation and high power operating characteristics, which is comprised of a semi-insulating III-V compound semiconductor wafer substrate having a frontside and a backside, a compound semiconductor etch stop layer, having an etch rate much slower than that of the wafer substrate, epitaxially grown on the frontside of said wafer substrate, an active compound semiconductor device consisted of at least two layers of compound semiconductor material epitaxially grown on the said etch stop layer, wells on the backside of said wafer substrate located underneath heat generating regions of said active device, wherein the wells are formed by etching action until the depth of wells reach said etch stop layer, and a heat conducting material disposed said wells.
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