Compound semiconductor, method for producing the same,...

Details Compound semiconductor, method for producing the same,... Compound semiconductor, method for producing the same,...

2005-09-16

2009-02-24

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S096000, C257S102000, C257SE33004, C372S045010, C372S046010

Reexamination Certificate

active

07495262

ABSTRACT:
An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.

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Japanese Office Action, with English Translation, issued in corresponding Japanese Patent Application No. JP 2002-172336, mailed on Jan. 15, 2008.

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