Method of forming a lower electrode of a capacitor

Details Method of forming a lower electrode of a capacitor Method of forming a lower electrode of a capacitor

2005-11-18

2009-12-08

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S238000, C438S740000, C257SE21170, C257SE21231, C257SE21238, C257SE21245, C257SE21246, C257SE21267, C257SE21293, C257SE21278, C257SE21645, C257SE21646

Reexamination Certificate

active

07629262

ABSTRACT:
In an embodiment, a method of forming a lower electrode of a capacitor in a semiconductor memory device includes etching a mold oxide layer to have at a cylindrical structure, resulting in an electrode with increased surface area. The cylindrical structure may have more than one radius. This increased surface area results in an increased capacitance. An excessive etch phenomenon, which occurs because a sacrificial oxide layer is etched at a higher rate than the mold oxide layer, is avoided.

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