Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-04-13
2009-12-29
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C267S251000, C267S251000
Reexamination Certificate
active
07638878
ABSTRACT:
A method for forming a semiconductor device comprises forming first and second bit lines at different levels. Forming the bit lines at different levels increases processing latitude, particularly the spacing between the bit lines which, with conventional processes, may strain photolithographic limits. A semiconductor device formed using the method, and an electronic system comprising the semiconductor device, are also described.
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Search Report and Written Opinion for International Application No. PCT/US2007/009282, 14 pages, Dec. 3, 2007.
Micro)n Technology, Inc.
Weiss Howard
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