Method for fabricating thin layer device

Details Method for fabricating thin layer device Method for fabricating thin layer device

2006-09-25

2009-06-09

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

C438S977000, C438S459000, C438S002000, C257S661000, C257SE39006, C257SE39015, C257SE39018

Reexamination Certificate

active

07544964

ABSTRACT:
A method for producing a thin layer device such as a superconductive device excellent in mechanical strength and useful as a submillimeter band receiver is provided. The thin layer device is produced by forming a multilayer structure substance comprising an NbN/MgO/NbN-SIS junction on an MgO temporary substrate, then forming SiO2, as a substrate, on said multilayer structure substance, and subsequently removing the MgO temporary substrate by etching. A superconductive device (a thin layer device) produced by a method of the present invention has excellent performance and high mechanical strength, and therefore introduction to a waveguide for a submillimeter band is also easy.

REFERENCES:
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patent: 6653209 (2003-11-01), Yamagata
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patent: 2001-352109 (2001-12-01), None
Takeda et al., Waveguide-type all-NbN SIS mixers on MgO substrates.

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