Method of forming magnetic random access memory (MRAM)...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S003000, C438S099000, C438S458000, C438S464000

Reexamination Certificate

active

07494896

ABSTRACT:
A method of forming a magnetic memory device on a substrate includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, transferring the memory device to the substrate, and forming an organic transistor on the substrate prior to transfer of the magnetic memory device.

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Supratik Guha et al., “Transplanted Si films on arbitrary using GaN underlayers”, Applied Physics Letters, vol. 76, No. 10, Mar. 6, 2000, pp. 1264-1266.

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