Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2003-10-14

2009-11-24

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S738000, C257S776000, C257S780000, C257SE23174, C257SE23011

Reexamination Certificate

active

07622810

ABSTRACT:
Disconnection of wiring and deterioration of step coverage are prevented to offer a semiconductor device of high reliability. A pad electrode formed on a silicon die is connected with a re-distribution layer on a back surface of the silicon die. The connection is made through a pillar-shaped conductive path filled in a via hole penetrating the silicon die from the back surface of the silicon die to the pad electrode.

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