Transistor having soluble layers

Details Transistor having soluble layers Transistor having soluble layers

2005-05-24

2009-12-22

Mai, Anh D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S066000, C257SE51007, C252S062000

Reexamination Certificate

active

07635857

ABSTRACT:
A method for forming a transistor, comprising: depositing a first material from solution in a first solvent to form a first layer of the transistor; and subsequently whilst the first material remains soluble in the first solvent, forming a second layer of the transistor by depositing over the first material a second material from solution in a second solvent in which the first material is substantially insoluble.

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