High voltage semiconductor devices with JFET regions...

Details High voltage semiconductor devices with JFET regions... High voltage semiconductor devices with JFET regions...

2005-06-21

2009-12-08

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S141000, C257S262000, C257S287000, C257S343000, C257S401000, C257S492000, C257S493000, C257S577000

Reexamination Certificate

active

07629631

ABSTRACT:
A high-voltage field-effect device contains an extended drain or “drift” region having a plurality of JFET regions separated by portions of the drift region. Each of the JFET regions is filled with material of an opposite conductivity type to that of the drift region, and at least two sides of each JFET region is lined with an oxide layer. In one group of embodiments the JFET regions extend from the surface of an epitaxial layer to an interface between the epitaxial layer and an underlying substrate, and the walls of each JFET region are lined with an oxide layer. When the device is blocking a voltage in the off condition, the semiconductor material inside the JFET regions and in the drift region that separates the JFET regions is depleted. This improves the voltage-blocking ability of the device while conserving chip area. The oxide layer prevents dopant from the JFET regions from diffusing into the drift region and allowing the JFET regions to be accurately located in the drift region.

REFERENCES:
patent: 5488236 (1996-01-01), Baliga et al.
patent: 6800903 (2004-10-01), Rumennik et al.

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