Method of forming a crystalline phase material

Details Method of forming a crystalline phase material Method of forming a crystalline phase material

2006-06-19

2009-12-01

Speer, Timothy M (Department: 1794)

Stock material or miscellaneous articles

Composite

Of inorganic material

C257S640000, C257S649000, C257S754000, C428S446000

Reexamination Certificate

active

07625641

ABSTRACT:
A method of forming a crystalline phase material includes: providing stress inducing material within or operatively adjacent a material of a first crystalline phase; and annealing under conditions effective to transform the material to a second crystalline phase. The stress inducing material preferably induces compressive stress during the anneal to lower the activation energy to produce a more dense second crystalline phase. Example compressive stress inducing materials are SiO2, Si3N4, Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer as the crystalline phase material, it is provided to have a thermal coefficient of expansion which is less than that of the first phase crystalline material. Where the compressive stress inducing material is provided on the opposite side of a wafer, it is provided to have a thermal coefficient of expansion which is greater than that of the first phase crystalline material.

REFERENCES:
patent: 4247859 (1981-01-01), Rai-Choudhury et al.
patent: 4337476 (1982-06-01), Fraser et al.
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4876582 (1989-10-01), Janning
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5470794 (1995-11-01), Anjum et al.
patent: 5510295 (1996-04-01), Cabral et al.
patent: 5593924 (1997-01-01), Apte et al.
patent: 5608266 (1997-03-01), Agnello et al.
patent: 5665646 (1997-09-01), Kitano
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5776822 (1998-07-01), Fujii et al.
patent: 5828131 (1998-10-01), Cabral, Jr. et al.
patent: 5874351 (1999-02-01), Hu et al.
patent: 5997634 (1999-12-01), Sandhu et al.
patent: 6054387 (2000-04-01), Fukuda
patent: 6090708 (2000-07-01), Sandhu et al.
patent: 6376372 (2002-04-01), Paranjpe et al.
patent: 8-139056 (1996-05-01), None
Ito et al. “Advantage of Thermal Nitride and Nitroxide Gate Films in VLSI Process” IEEE Journal of Solid State Circuits, vol. Sc-17, No. 2, Apr. 1982. pp. 128-132.
Gas et al. (“Diffusion of Sb, Ga, Ge, and As in TiSi2”). Journal of Applied Physics. col. 63. No. 11, Jun. 1988. pp. 5335-5345.
Ilderem, V., et al., “Optimized Deposition Parameters For Low Pressure Chemical Vapor Deposited Titanium Silicide”,Massachusetts Institute of Technology, vol. 135, No. 10, pp. 2590-2596 (Feb. 1988).
Nagabushnam, R.V., et al., “Kinetics And Mechanism Of The C49 to C54 Titanium Disilicide Phase Transformation Formation In Nitrogen Ambient”, 5 Pages (Nov. 1995).
Huang, et al. 'The Influence of Ge-Implantation on the Electrical Characteristics of the Ultra-Shallow . . . IEEE Electron Device Letters, vol. 17, No. 3, Mar. 1996, pp. 88-90.
Omar, M. Ali, “Elementary Solid State Physics,” © 1975 by addison-Wesley Publishing Company, Inc., pp. 539-542 (6 pages total).
Wolf, et al., “Silicon Processing for the VLSI Era—vol. 1-Process Technology,” © 1986 by Lattice Press, pp. 242,261, 262, 303, & 304 (7 pages total).
Ma et al., “Manipulation of the Ti/Si reaction path by introducing an amorphous Ge interlayer”, 4thinternational conference on Solid-state and Integrated circuit technology Proceedings, 1995, pp. 35-37.

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