Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-11-16
2009-02-10
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S072000
Reexamination Certificate
active
07488999
ABSTRACT:
A solid-state imaging device includes a transfer element line for transferring an electric charge that is photoelectrically converted in a photoelectric conversion element line formed of a plurality of photoelectric conversion elements, and a charge detector for detecting an electric charge that is transferred by the transfer element line. The charge detector includes output gates disposed adjacently to a final transfer gate of the transfer element line, a reset gate for resetting an electric charge in the charge detector, a floating diffusion formed on a substrate surface adjacently to the output gates and the reset gate, and addition gates formed above the floating diffusion and along the direction from the output gates to the reset gate.
REFERENCES:
patent: 5438211 (1995-08-01), Nakamura et al.
patent: 6563149 (2003-05-01), Iizuka et al.
patent: 1-196175 (1989-08-01), None
patent: 5-325589 (1993-12-01), None
Menz Douglas M
NEC Electronics Corporation
Young & Thompson
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