Solid-state imaging device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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Details

C257S072000

Reexamination Certificate

active

07488999

ABSTRACT:
A solid-state imaging device includes a transfer element line for transferring an electric charge that is photoelectrically converted in a photoelectric conversion element line formed of a plurality of photoelectric conversion elements, and a charge detector for detecting an electric charge that is transferred by the transfer element line. The charge detector includes output gates disposed adjacently to a final transfer gate of the transfer element line, a reset gate for resetting an electric charge in the charge detector, a floating diffusion formed on a substrate surface adjacently to the output gates and the reset gate, and addition gates formed above the floating diffusion and along the direction from the output gates to the reset gate.

REFERENCES:
patent: 5438211 (1995-08-01), Nakamura et al.
patent: 6563149 (2003-05-01), Iizuka et al.
patent: 1-196175 (1989-08-01), None
patent: 5-325589 (1993-12-01), None

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